View SNA-686_236484.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Preliminary
SNA-686
Product Description
Sirenza Microdevices SNA-686 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-600), its small size (0.38mm x 0.38mm) and gold metallization make it an ideal choice for use in hybrid circuits.
Gain & Return Loss vs. Frequency
16 (ID=65mA, TLEAD=+25C) 0
DC-6 GHz, Cascadable GaAs HBT MMIC Amplifier
Not Recommended for New Designs See Application Note AN-019 for Alternates
12 Gain (dB)
-6 Return Loss (dB)
8
-12
Product Features Patented GaAs HBT Technology Cascadable 50 Ohm Gain Block 34 dBm Output IP3 @ 850 MHz Operates From Single Supply Low Cost Surface Mount Plastic Package Applications Cellular, PCS, CDPD, Wireless Data, SONET
Units
dBm dBm dBm dBm dBm dBm dB dB dB M Hz
4
-18
0 0 1 2 3 4 Frequency (GHz) 5
Gain Input Return Loss Output Return Loss
6 7
-24
Sy mbol
P1dB
Parameter
Output Pow er at 1dB Compression
Frequency
850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz
Min.
15.7
Ty p.
17.6 17.7 17.4 34.0 32.1 30.0 11.1 11.2 11.3 6000 1.3:1 1.4:1 16.3 16.5 16.6 7.3
Max.
IP3
Third Order Intercept Point
29.1 10.0 10.1
S21 Bandw idth VSWRIN VSWROUT S12 NF VD ID RTH, j-l
Small Signal Gain (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead)
12.2 12.3
DC-6000 M Hz DC-6000 M Hz 850 M Hz 1950 M Hz 2400 M Hz 1950 M Hz
dB dB dB dB V I
o
8.8 5.6 72
5.0 58
5.3 65 261
C/W
Test Conditions:
VS = 8 V RBIAS = 43 Ohms
ID = 65 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101398 Rev C
Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol Parameter Unit 100 500 850 1950 2400 3500
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
VS = 8v RBIAS = 43 Ohms
dB dBm dBm dB dB dB dB
11.1
11.1 35.0 17.5
11.1 34.0 17.6 22.3 15.3 16.3 7.3
11.2 32.1 17.7 19.6 17.8 16.5 7.3
11.3 30.0 17.4 18.4 19.6 16.6
11.3
29.5 16.0 16.2
25.2 15.9 16.2 7.2
17.9 22.2 17.0
Test Conditions:
ID = 65mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
Absolute Maximum R atings
Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l
Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) Max. Storage Temp.
Absolute Limit 120 mA 7V +16 dBm +175C -40C to +85C +150C
NOTE: While the SNA-686 can be operated at different bias currents, 65 mA is the recommended bias for lower junction temperature and longer life. This reflects typical operating conditions which we have found to be an optimal balance between high IP3 and MTTF. In general, MTTF is improved to more than 100,000 hours when biasing at 65 mA and operating up to 85C ambient temperature.
Junction Temperature vs. Dissipated Power
260 250 Junction Temperature (C) 240 230
MTTF vs. Dissipated Power
1.E+08
1.E+07 MTTF (hrs) 85C lead temp
220 210 200 190 180 170 160 0.3 0.35 0.4 0.45 Dissipated Power (W) 0.5 0.55 0.6
1.E+06
TJmax
1.E+05
85C lead temp
1.E+04
1.E+03 0.3 0.35 0.4 0.45 0.5 0.55 0.6 Dissipated Power (W)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101398 Rev C
Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier Typical RF Performance (VDS = 5.3V, IDS = 65mA, TLEAD=25 C)
Gain & Isolation vs. Frequency
16 Gain Isolation 0
0 -5 Return Loss (dB)
Return Loss vs. Frequency
12 Gain (dB)
-5 Isolation (dB)
-10 -15 -20 Input Return Loss -25 Output Return Loss
8
-10
GHz
4 -15
0 0 1 2 3 4 5 6 7 Frequency (GHz)
-20
-30 0 1 2 3 4 5 6 7 Frequency (GHz)
Output IP3 vs. Frequency
39 36 33 30 27 24 21 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0 3.5 21 18 15 12 9 6 3 0.5 1.0
P1dB vs. Frequency
P1dB (dBm)
OIP3 (dBm)
1.5
2.0 Frequency (MHz)
2.5
3.0
3.5
Noise Figure vs. Frequency
8.0 7.5 7.0 NF (dB) 6.5 6.0 5.5 5.0 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101398 Rev C
Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit
R BIAS
1 uF 1000 pF
Reference Designator
Frequency (Mhz) 500 850 1950 2400 3500
CB
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
39 pF 15 pF 15 nH
CD LC
CD LC
RF in CB
1
4
SNA-686
3 CB
Recommended Bias Resistor Values for ID=65mA RBIAS=( VS-VD ) / ID
RF out
2
Supply Voltage(VS) RBIAS
8V 43
9V 56
12 V 100
15 V 150
Note: RBIAS provides DC bias stability over temperature.
VS
RBIAS
1 uF 1000 pF Mounting Instructions
1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
LC
S6
CD CB
CB
Pin #
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance.
Part Identification Marking The part will be marked with an S6 designator on the top surface of the package. 3
1
2, 4
GND
4
S6
1
2
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Caution: ESD sensitive
Part Number Ordering Information
Part Number SNA-686 Reel Size 7" Devices/Reel 1000
Appropriate precautions in handling, packaging and testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101398 Rev C
Preliminary Preliminary SNA-686 DC-6GHz Cascadable MMIC Amplifier
Dimensions in inches [millimeters]
PCB Pad Layout
Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances.
Nominal Package Dimensions
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101398 Rev C

▲Up To Search▲

Price & Availability of SNA-686

	To Download SNA-686 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .